Mfg Part Number: P4C187-70CMB | Alternate P/N: P4C18770CMB | Manufacturer: Pyramid Semiconductor Corp |
NSN : 5962-01-283-4329 | NIIN : 012834329 | Item Name : microcircuit memory |
CAGE Code : 3DTT2 | FSC : 5962 Microcircuits Electronic |
Thank you for your interest in the P4C187-70CMB part of Microcircuit Memory, we have in stock on Integrated NSN. This particular Pyramid Semiconductor Corp item is listed alongside the NSN 5962-01-283-4329 and part number P4C187-70CMB for your ease of search. With current availability for this item, we encourage you to take advantage of our Instant RFQ service in order to acquire a competitive quote for your comparisons. As our team members can be contacted 24/7x365, responses to requests or inquiries are completed with haste.
Take your time to explore our listing of part numbers like P4C187-70CMB and you will find that the NSN 5962-01-283-4329 can be found listed under FSC 5962 Microcircuits Electronic and CAGE Code 3DTT2. However, we carry a myriad of other NSN parts, all of which have been sourced from reputable distributors like Pyramid Semiconductor Corp. Kickoff the procurement process with a quote request that includes all of your part requirements and see how Integrated NSN can serve as your go-to sourcing solution. For additional questions, call or email us directly; we are ready to help you meet your operational deadlines however necessary.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-283-4329 Item Description: Microcircuit Memory | 5962 | 012834329 | 0 | N | D | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | D | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
P4c187-70cmb | 1 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.260 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 19 INPUT |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES NOMINAL OUTPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 22 PRINTED CIRCUIT |
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